Pec-based die read level read offset
AssigneeMicron Technology, Inc.
InventorsMurong Lang, Li-Te Chang, Zhenming Zhou
Life of this patent
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Abstract
A system and method for reading data from a memory device are provided. The system and method determine a center of valley (CoV) shift for an individual memory die and generate a read offset by program-erase count (PEC) (ROBP) lookup table individually associated with the individual memory die based on the determined CoV shift, the ROBP lookup table including read level offset values for different word line groups and PEC counts. The system and method apply the ROBP lookup table to adjust read levels for the individual memory die during memory operations to compensate for threshold voltage degradation.
Claims20
A system comprising:
- a memory device;
- and
- a processing device, operatively coupled to the memory device, configured to perform operations comprising:
- determining a center of valley (CoV) shift for an individual memory die;
- generating a read offset by program-erase count (ROBP) lookup table individually associated with the individual memory die based on the determined CoV shift, the ROBP lookup table including read level offset values for different word line groups and program-erase count (PEC) counts;
- and
- applying the ROBP lookup table to adjust read levels for the individual memory die during memory operations to compensate for threshold voltage degradation.
At least one non-transitory machine-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- determining a center of valley (CoV) shift for an individual memory die;
- generating a read offset by program-erase count (ROBP) lookup table individually associated with the individual memory die based on the determined CoV shift, the ROBP lookup table including read level offset values for different word line groups and program-erase count (PEC) counts;
- and
- applying the ROBP lookup table to adjust read levels for the individual memory die during memory operations to compensate for threshold voltage degradation.
A method comprising:
- determining a center of valley (CoV) shift for an individual memory die;
- generating a read offset by program-erase count (ROBP) lookup table individually associated with the individual memory die based on the determined CoV shift, the ROBP lookup table including read level offset values for different word line groups and program-erase count (PEC) counts;
- and
- applying the ROBP lookup table to adjust read levels for the individual memory die during memory operations to compensate for threshold voltage degradation.
Dependencies are inferred from the claim text.