Memory device including noise removal circuit and method for operating the memory device

A method of operating a memory device, comprising:

• storing, as first temperature data in a first buffer, previous output temperature data for a memory cell;
• storing, as second temperature data in a second buffer, first input temperature data of the memory cell inputted during a first period of a clock signal;
• storing, as third temperature data in a third buffer, second input temperature data of the memory cell inputted during a second period subsequent to the first period of the clock signal;
• comparing a first magnitude of the first temperature data, a second magnitude of the second temperature data, and a third magnitude of the third temperature data;
• outputting a selection signal based on the comparing;
• and
• outputting, as current output temperature data, at least one of the first temperature data or the third temperature data based on the selection signal, the current output temperature data being synchronized to a delayed clock signal generated by delaying the clock signal.

A memory device, comprising:

• a memory die comprising:
• a plurality of memory cells;
• and
• a noise removal circuit configured to:
• compare a third magnitude of previous output temperature data of the plurality of memory cells, a first magnitude of first input temperature data of the plurality of memory cells inputted during a first period of a clock signal, and a second magnitude of second input temperature data of the plurality of memory cells inputted during a second period subsequent to the first period of the clock signal;
• and
• output, as current output temperature data of the plurality of memory cells, at least one of the previous output temperature data or the second input temperature data, based on a delayed clock signal generated by delaying the clock signal;
• and
• a logic die stacked with the memory die in a first direction and configured to control a temperature of the memory die based on the current output temperature data provided using a through-silicon via at least partially penetrating the memory die in the first direction.