Magnesium Oxide Seed Layer For High Magnetic Moment Material With Amorphous Or Fine Grain Structure

Abstract

The present embodiments relate to a tunneling magneto-resistive (TMR) sensor structure with an oxide seed layer that can generally promote the magnetic moment of an Iron-Nickel-Rhenium (FeNiRe) junction shield film, and a magnesium oxide (MgO) seed layer can be magnetic moment at the highest level and provide a low Hc. Particularly, the present embodiments can provide a rare earth doped NiFe or CoFe for a junction shield application, such as a FeNiRe material for a junction shield application. Further, an oxide seed layer of a rare earth doped NiFe or CoFe can be used for junction shield application. In some instances, an oxide seed layer of FeNiRe film can be used for junction shield application. Additionally, a MgO seed layer of rare earth doped NiFe or CoFe or a MgO/FeNiRe layer can be used for a junction shield application.

Dependencies are inferred from the claim text.