Process for producing an sic bulk monocrystal with an annealing and cooling phase and monocrystalline circular-cylindrical sic base body

A process for producing at least one SiC bulk monocrystal by sublimation growth, which comprises the steps of:

• disposing at least one SiC seed crystal in at least one crystal growth region of a growth crucible prior to a start of growth, and introducing SiC source material into a SiC reservoir region of the growth crucible;
• generating a SiC growth gas phase in the at least one crystal growth region by sublimating the SiC source material and transporting sublimated gaseous components there during a growth phase, and the at least one SiC bulk monocrystal having a central crystal longitudinal axis grows on the at least one SiC seed crystal by deposition from the SiC growth gas phase;
• and
• cooling the at least one SiC bulk monocrystal during an annealing and cooling phase, carried out in the growth crucible after the growth phase is complete, wherein an axial cooling temperature gradient measured in a direction of the central crystal longitudinal axis is provided within the at least one SiC bulk monocrystal, and an axial quotient of the axial cooling temperature gradient and an axial growth temperature gradient, prevailing within the at least one grown SiC bulk monocrystal at an end of a previous growth phase and also measured in a direction of the central crystal longitudinal axis, has at most an axial comparison value of 0.4.