Clean method for deposition chambers
AssigneeSkytech
InventorsTA-HAO KUO, WEI-DER SUNG, YU-CHI LIU, CHUN-FU WANG
Life of this patent
Estimating the term…
Loading patent…
AssigneeSkytech
InventorsTA-HAO KUO, WEI-DER SUNG, YU-CHI LIU, CHUN-FU WANG
Estimating the term…
This disclosure is a cleaning method for a deposition chamber. First, a purge gas is supplied into a deposition chamber, and molybdenum precursor remaining in the deposition chamber is extracted through a vacuum pump. Then, a hydrogen plasma is used to reduce a molybdenum trioxide deposit attached to the inner surface of the deposition chamber, and the molybdenum trioxide deposit is reduced to molybdenum particles and water vapor. The purge gas is again supplied into the deposition chamber, and molybdenum particles and water vapor is extracted through the vacuum pump. Through the method described in this invention, the molybdenum trioxide deposit attached to the inner surface of the deposition chamber and the residual molybdenum precursor can be effectively removed, and the number of particles in the deposition chamber can be reduced to improve the quality and yield of the subsequent thin film deposition process.
A cleaning method for a deposition chamber, comprising:
A cleaning method for a deposition chamber, comprising:
Dependencies are inferred from the claim text.