Substrate processing method and substrate processing apparatus

A substrate processing apparatus, comprising:

• a processing container configured to accommodate a substrate;
• a first processing gas supply configured to supply a first processing gas containing a first metal into the processing container to the substrate having a recess in which a semiconductor layer containing silicon is exposed on a bottom surface of the recess and whose sidewall is formed by an insulator film, and form a metal silicide film that forms a bottom wall of the recess;
• a plasma processing part including at least one of a plasma etching gas supply configured to supply a plasma-converted etching gas into the processing container to remove a film of the first metal on the sidewall of the recess, or a second processing gas supply configured to supply a plasma-converted second processing gas into the processing container to form a metal-containing film, which is a mixture of the first metal and an element constituting the insulator film, on the sidewall of the recess;
• and
• a film-forming gas supply configured to supply a first film-forming gas containing a second metal into the processing container and form a stacked metal film stacked on the metal silicide film of the substrate processed by the plasma processing part.