Method for forming carbon film on substrate
AssigneeSkytech
InventorsYAO-SYUAN CHENG, CHUN-FU WANG, KUO-JU LIU, CHING-LIANG YI
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Abstract
This disclosure is a method for forming a carbon film on a substrate, and comprises: performing an ion implantation process on a substrate to form an ion-implanted region on a surface of the substrate; heating the substrate and performing a plasma pre-cleaning process on the substrate; forming a carbon film on the surface of the substrate; and then annealing the substrate at a high temperature. After performing the heating process and the plasma pre-cleaning process, moisture and dangling bonds on the substrate can be removed, which is conducive to forming a dense and smooth carbon film on the substrate to improve the protective effect of the carbon film on the substrate.
Claims10
A method for forming a carbon film on a substrate, comprising:
- performing an ion implantation process on a substrate to form at least one ion-implanted region on the substrate;
- performing a heating process on the substrate to remove moisture from the substrate;
- performing a plasma pre-cleaning process on the substrate;
- forming a carbon film on at least one surface of the substrate, wherein the carbon film covers the ion-implanted region on the substrate;
- and
- performing a high-temperature annealing process on the substrate.
A method for forming a carbon film on a substrate, comprising:
- performing an ion implantation process on a substrate to form at least one ion-implanted region on the substrate;
- performing a heating process on the substrate to remove moisture from the substrate;
- forming a carbon film on at least one surface of the substrate, wherein the carbon film covers the ion-implanted region on the substrate;
- and
- performing a high-temperature annealing process on the substrate.
A method for forming a carbon film on a substrate, comprising:
- performing an ion implantation process on a substrate to form at least one ion-implanted region on the substrate;
- performing a plasma pre-cleaning process on the substrate;
- forming a carbon film on at least one surface of the substrate, wherein the carbon film covers the ion-implanted region on the substrate;
- and
- performing a high-temperature annealing process on the substrate.
Dependencies are inferred from the claim text.