Substrate processing apparatus and a substrate processing method
AssigneeTokyo Electron Limited
InventorYoshiaki DAIGO
Life of this patent
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Abstract
A substrate processing apparatus includes a chamber; a substrate support disposed in the chamber and including a substrate support surface; a rotation unit configured to rotate the substrate support; a processing gas supply configured to supply a processing gas toward the substrate support surface; a target disposed above the substrate support surface of the substrate support, the target having a surface disposed along a flow of the processing gas; and a rectifying gas supply configured to supply a rectifying gas into the chamber and rectify the processing gas passing through the surface of the target in a direction toward the substrate support surface.
Claims20
A substrate processing apparatus comprising:
- a chamber;
- a substrate support disposed in the chamber and including a substrate support surface;
- a rotation unit configured to rotate the substrate support;
- a processing gas supply configured to supply a processing gas toward the substrate support surface;
- a target disposed above the substrate support surface of the substrate support, the target having a surface disposed along a flow of the processing gas;
- and
- a rectifying gas supply configured to supply a rectifying gas into the chamber and rectify the processing gas passing through the surface of the target in a direction toward the substrate support surface.
A substrate processing method comprising:
- (a) providing a substrate on a substrate support;
- and
- (b) supplying a processing gas to the substrate on the substrate support to process the substrate while rotating the substrate support,
- wherein the (b) includes
- (b-1) flowing the processing gas along a surface of a target, releasing sputter particles from the surface of the target by using a plasma formed from the processing gas, and allowing the processing gas including the sputter particles to flow out from a processing gas supply port toward the substrate, and
- (b-2) rectifying the processing gas flowed out from the processing gas supply port in a direction toward the substrate by a rectifying gas.
Dependencies are inferred from the claim text.