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US 2026/0201541 A1Published application
Molybdenum sputtering target, method for manufacturing same, and film forming method for molybdenum film
AssigneeTosoh Corporation
InventorsYoichiro KODA, Osamu MATSUNAGA, Daiki SHONO, Masami MESUDA
Life of this patent
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Abstract
Disclosed is a molybdenum sputtering target having a content of metal impurities of 100 ppm by mass or less, a tungsten content of 50 ppm by mass or less, and an oxygen concentration of 50 ppm by mass or less.
Claims19
A molybdenum sputtering target having a content of metal impurities of 100 ppm by mass or less, a tungsten content of 50 ppm by mass or less, and an oxygen concentration of 50 ppm by mass or less.
Dependencies are inferred from the claim text.