Composition and method for cmp of metal films

A chemical mechanical polishing composition comprising:

• 0.1 wt. % to 10 wt. %, preferably from 0.1 wt. % to 5 wt. %, more preferably from 0.1 wt. % to 3 wt. %, and most preferably from 0.5 wt. % to 2 wt. % of abrasive particles;
• 0.01 wt. % to 10.0% wt. %, preferably 0.05 wt. % to 5.0 wt. %, or most preferably 0.1 wt. % to 1 wt. % of a first chemical additive, wherein the first chemical additive comprises an amine compound, the amine compound further comprising a carboxylic acid, or a phosphoric acid, or a sulfonic acid;
• between 0.01 and 0.0 wt. % or preferably between 0.01 and 0.5 wt. % of a second chemical additive, wherein the second chemical additive is an oxidizer selected from a group consisting of:
• ferric nitrate, potassium iodate, and mixtures thereof;
• a water soluble solvent;
• and optionally
• biocide;
• and pH
• adjuster;
• wherein the chemical mechanical polishing composition has a pH of 2 to 7, preferably 2 to 5, more preferably 2 to 4, and most preferably 2 to 3.5;
• and
• wherein the chemical mechanical polishing composition does not contain hydrogen peroxide.