Organoamino-Functionalized Linear and Cyclic Oligosiloxanes for Deposition of Silicon-Containing Films

A method for depositing a film comprising silicon and oxygen onto a substrate, the method comprising the steps of:

• a) providing a substrate in a reactor;
• b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formula A, B, C, D, and E
• wherein
• R1 is selected from a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aryl group;
• R2 is selected from the group consisting of hydrogen, a C1 to C10 linear alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aryl group, wherein R1 and R2 are either linked to form a cyclic ring structure or are not linked to form a cyclic ring structure;
• R3-10 are each independently selected from hydrogen, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C2 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aryl group;
• X is selected from the group consisting of a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C2 to C10 alkenyl group, a C2 to C10 alkynyl group, a C4 to C10 aryl group, a C1 to C10 acyl group, an amine group (—NR1 R2), H, Cl, Br, I, F, a C2 to C12 carboxylate group, a C1 to C10 linear or branched alkoxy group, a trimethylsiloxy group, a dimethylsiloxy group, a methylsiloxy group, or a siloxy group, wherein R1 and X are either linked to form a cyclic ring or are not linked to form a cyclic ring;
• c) purging the reactor with a purge gas;
• d) introducing at least one of an oxygen-containing source and a nitrogen-containing source into the reactor;
• and
• e) purging the reactor with the purge gas, wherein the steps b through e are repeated until a desired thickness of film is deposited;
• and wherein the method is conducted at one or more temperatures ranging from about 25° C. to 600° C.