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US 2026/0200804 A1Published application
Silicon nitride sintered body, silicon nitride substrate, silicon nitride circuit board, and semiconductor device
AssigneeNiterra Materials Co., Ltd.
InventorsYoshihito YAMAGATA, Katsuyuki AOKI, Yuta TAKEUCHI
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Abstract
According to one embodiment, in a case where a DC electric field of 5 kV/mm is applied to a silicon nitride sintered body at 25° C., a ratio Q25(600)/Q25(5) of an accumulated charge amount 600 seconds after a start of application to an accumulated charge amount 5 seconds after the start of the application is not less than 1.0 and not more than 3.0. A thermal conductivity of the silicon nitride sintered body is 65 W/m·K or more.
Claims14
A silicon nitride sintered body,
- in a case where a DC electric field of 5 kV/mm is applied to the silicon nitride sintered body at 25° C.,
- a ratio Q25(600)/Q25(5) of not less than 1.0 and not more than 3.0, the ratio Q25(600)/Q25(5) being a ratio of an accumulated charge amount 600 seconds after a start of application to an accumulated charge amount 5 seconds after the start of the application, and
- a thermal conductivity of 65 W/m·K or more.
Dependencies are inferred from the claim text.