Method for mechanical grinding of soi wafer and mechanical grinding apparatus

Abstract

The present invention provides a method for mechanical grinding of an SOI wafer and a mechanical grinding apparatus. The method includes a mechanical grinding process including a coarse grinding process, in which a feed speed of a coarse grinding wheel and a rotational speed of a grinding table satisfy a predefined condition, thereby allowing for a damaged area proportion on a side of a carrier wafer away from a device wafer to be lower than a predetermined threshold during thinning of the device wafer on a side thereof away from the carrier wafer by mechanical grinding to a predetermined thickness. The present invention overcomes the problems that significant backside damage may be caused to an SOI wafer during its mechanical grinding, which may affect the performance and reliability of a device fabricated from the wafer.

Dependencies are inferred from the claim text.