Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMIN-FENG KAO, DUN-NIAN YAUNG, HSING-CHIH LIN, JEN-CHENG LIU
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a first die and a second die. The first die includes a substrate, an interconnection structure and a capacitor structure. The substrate has a front-side surface and a back-side surface. The interconnection structure is disposed over the front-side surface. The capacitor structure extends from the back-side surface to the front-side surface and into the interconnection structure. The second die is disposed over the back-side surface and is bonded to the first die. A method for forming a semiconductor structure is also provided.
Claims20
A semiconductor structure, comprising:
- a first die including:
- a first substrate having a first front-side surface and a first back-side surface;
- and
- a first interconnection structure disposed on the first front-side surface;
- a second die disposed over the first front-side surface and bonded to the first die, the second die including:
- a second substrate having a second front-side surface and a second back-side surface;
- and
- a second interconnection structure disposed on the second front-side surface;
- and
- a capacitor structure extending from the first interconnection structure to the second interconnection structure.
A semiconductor structure, comprising:
- a first die including:
- a first substrate having a first front-side surface and a first back-side surface;
- and
- a first bonding structure disposed over the first front-side surface;
- a second die bonded to the first die, the second die including:
- a second substrate having a second front-side surface facing the first front-side surface;
- and
- a second bonding structure disposed over the second front-side surface;
- a third die bonded to the first die, wherein the third die includes a third substrate having a third front-side surface facing the first back-side surface;
- and
- a capacitor structure extending through the first bonding structure and the second bonding structure.
A semiconductor structure, comprising:
- a first substrate;
- a first interconnection structure disposed over the first substrate;
- a second substrate disposed over the first substrate and the first interconnection structure;
- a second interconnection structure disposed between the first interconnection structure and the second substrate, wherein the second interconnection structure comprises at least a metal feature;
- and
- a capacitor structure extending from the first interconnection structure to the second interconnection structure, wherein the capacitor structure is separated from the metal feature of the second interconnection structure.
Dependencies are inferred from the claim text.