Semiconductor device and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• a step of forming a plurality of lower conductive patterns above a substrate;
• a step of forming a first insulating film filling gaps between the plurality of lower conductive patterns above the substrate;
• a step of forming a recess having an upper end surface of the lower conductive pattern as a bottom surface from an upper surface of the first insulating film by removing a recess above the lower conductive pattern exposed to the upper surface of the first insulating film;
• a step of forming a plurality of upper conductive patterns joined to the plurality of lower conductive patterns by patterning a conductive film formed on the lower conductive pattern and the first insulating film;
• and
• a step of forming a second insulating film filling gaps between the plurality of upper conductive patterns on the first insulating film, wherein
• in the step of forming the upper conductive patterns,
• after the conductive film is patterned by anisotropic etching until the first insulating film is exposed,
• in a portion where the lower conductive pattern and the upper conductive pattern are positionally deviated, the conductive film is further anisotropically etched so as to leave the conductive film on an entire upper end surface of the lower conductive pattern in the recess.