Ion implanter
AssigneeNissin Ion Equipment Co., Ltd.
InventorMasatoshi ONODA
Life of this patent
Estimating the term…
Abstract
An ion implanter includes a process chamber, two holders to be scanned linearly across an ion beam in the process chamber, the two holders including a first holder that supports a single wafer and a second holder that supports one or more wafers; and a controller that selects only the first holder, only the second holder, or both the first holder and the second holder to be scanned from the two holders during ion implantation into plural wafers. When a number of wafers to be processed is N and a number of wafers supported by the second holder is M, the controller selects the holders to be scanned to satisfy a relationship N = (1 + M) × A + B + M × C. Each of A, B, and C is 0 or a natural number, and one or more of A, B, and C is not 0.
Claims16
An ion implanter comprising:
- a process chamber;
- two holders configured to be scanned linearly across an ion beam in the process chamber, the two holders comprising a first holder configured to support a single wafer and a second holder configured to support one or more wafers;
- and
- a controller configured to select only the first holder, only the second holder, or both the first holder and the second holder to be scanned from the two holders during ion implantation into a plurality of wafers,
- wherein the controller is configured such that, when a number of wafers of the plurality of wafers to be processed is N and a number of wafers supported by the second holder is M, the controller selects the holders to be scanned to satisfy a relationship N = (1 + M) × A + B + M × C,
- wherein A is a number of times both the first holder and the second holder are selected, B is a number of times only the first holder is selected, and C is a number of times only the second holder is selected, and
- wherein each of A, B, and C is 0 or a natural number, and at least one of A, B, or C is not 0.
An ion implanter comprising:
- a process chamber;
- two holders configured to be scanned linearly across an ion beam in the process chamber during an ion implantation of a plurality of wafers, the ion implantation including a plurality of ion implantation processes, the two holders comprising a first holder configured to support a single wafer and a second holder configured to support one or more wafers;
- and
- a controller configured to select, for each ion implantation process of the plurality of ion implantation processes, only the first holder, only the second holder, or both the first holder and the second holder to be scanned,
- wherein when a number of wafers of the plurality of wafers to be processed is N and a number of wafers supported by the second holder is M, the ion implantation of the plurality of wafers satisfies a relationship N = (1 + M) × A + B + M × C,
- wherein A is a number of times both the first holder and the second holder are selected during the ion implantation, B is a number of times only the first holder is selected during the ion implantation, and C is a number of times only the second holder is selected during the ion implantation, and
- wherein each of A, B, and C is 0 or a natural number, and at least one of A, B, or C is not 0.
Dependencies are inferred from the claim text.