Electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Hajime KIMURA, Atsushi MIYAGUCHI, Yoshiaki OIKAWA
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Hajime KIMURA, Atsushi MIYAGUCHI, Yoshiaki OIKAWA
Estimating the term…
An electronic device with a novel structure is provided. The electronic device includes a semiconductor device, and the semiconductor device has a structure where a first element layer, a second element layer, and a third element layer are stacked. The first element layer includes a first transistor that includes a semiconductor layer containing silicon in a channel formation region. The second element layer includes a second transistor that includes a semiconductor layer containing a metal oxide in a channel formation region. The third element layer includes a light-emitting device. The first element layer includes an arithmetic circuit including a scan flip-flop. The second element layer includes a backup circuit electrically connected to the scan flip-flop and a pixel circuit electrically connected to the light-emitting device.
An electronic device comprising:
An electronic device comprising:
An electronic device comprising a semiconductor device,
Dependencies are inferred from the claim text.