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US 2026/0198091 A1Published application
Semiconductor device, display device, display module, and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMotomu KURATA, Sachiaki TEZUKA, Tsutomu MURAKAWA
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Abstract
To provide a semiconductor device that occupies a small area. The semiconductor device includes transistors having at least two types of structures and formed on the same plane by the steps some of which are shared. A vertical transistor with an extremely short channel length is used as a transistor required to have a high on-state current. Meanwhile, a planar transistor with a long channel length and a back gate is used as a transistor required to have high saturation characteristics.
Claims9
A semiconductor device comprising:
- a first transistor and a second transistor,
- wherein the first transistor comprises a first conductive layer, a second conductive layer, a third conductive layer, a first oxide layer, a second oxide layer, a first insulating layer, a second insulating layer, and a third insulating layer,
- wherein the second transistor comprises a fourth conductive layer, a fifth conductive layer, a sixth conductive layer, a seventh conductive layer, a third oxide layer, the first insulating layer, a fourth insulating layer, and a fifth insulating layer,
- wherein the first insulating layer is positioned over the first conductive layer and over the fourth conductive layer,
- wherein the second insulating layer is positioned over the first insulating layer,
- wherein the first oxide layer is positioned over the second insulating layer,
- wherein the second conductive layer is positioned over the first oxide layer,
- wherein the first insulating layer, the second insulating layer, the first oxide layer, and the second conductive layer comprise an opening reaching the first conductive layer,
- wherein in the opening, the second oxide layer is in contact with at least a top surface of the first conductive layer, a side surface of the first insulating layer, a side surface of the second insulating layer, a side surface of the first oxide layer, and a side surface of the second conductive layer,
- wherein in the opening, the third insulating layer is positioned over the second oxide layer,
- wherein in the opening, the third conductive layer overlaps with the second oxide layer with the third insulating layer therebetween,
- wherein the fourth insulating layer is positioned over the first insulating layer,
- wherein the third oxide layer is positioned over the fourth insulating layer,
- wherein the fifth conductive layer and the sixth conductive layer are positioned over the third oxide layer to be separated from each other,
- wherein the fifth insulating layer is positioned over the third oxide layer and is positioned between the fifth conductive layer and the sixth conductive layer, and
- wherein the seventh conductive layer comprises a portion positioned over the fifth insulating layer and overlapping with the fourth conductive layer with the third oxide layer between the portion and the fourth conductive layer.
13 more elements
Dependencies are inferred from the claim text.