Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTakahide TANAKA
Life of this patent
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Abstract
A semiconductor device includes: a base body of a first conductivity-type; a first well region of a second conductivity-type provided on a top surface side of the base body and provided with a high-side circuit; a voltage blocking structure provided to surround a circumference of the first well region; a level shifter provided in the voltage blocking structure; and first and second resistive field plates provided over the voltage blocking structure with an insulating film interposed, each having one end electrically connected to different semiconductor regions electrically connected to the high-side circuit.
Claims20
A semiconductor device comprising:
- a base body of a first conductivity-type;
- a first well region of a second conductivity-type provided on a top surface side of the base body and provided with a high-side circuit;
- a voltage blocking structure provided to surround a circumference of the first well region;
- a level shifter provided in the voltage blocking structure;
- and
- first and second resistive field plates provided over the voltage blocking structure with an insulating film interposed, each having one end electrically connected to different semiconductor regions electrically connected to the high-side circuit.
Dependencies are inferred from the claim text.