US 2026/0198033 A1 · SEMICONDUCTOR DEVICE AND METHODS FOR FORMING THE SAME

Abstract

A method of forming a semiconductor device includes forming a gate electrode, a source electrode, and a drain electrode within a first dielectric material layer, forming a gate dielectric layer over the first dielectric material layer, forming source and drain contact via structures through the gate dielectric layer on the source and drain electrodes, and forming an active layer over the gate dielectric layer. End portions of the active layer may be converted into a source region and a drain region by implanting electrical dopants. A semiconductor structure includes a gate electrode, source and drain electrodes within a first dielectric material layer, a gate dielectric layer overlying the first dielectric material layer, source and drain contact via structures vertically extending through the gate dielectric layer and contacting the source and drain electrodes, and an active layer overlying the gate dielectric layer.

Claims20

Dependent claims

A method of forming a semiconductor device, comprising:

forming a gate electrode, a source electrode, and a drain electrode within a first dielectric material layer;
depositing a gate dielectric layer over the first dielectric material layer;
forming a source contact via structure and a drain contact via structure through the gate dielectric layer and on the source electrode and the drain electrode, respectively;
and
depositing an active layer over the gate dielectric layer.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor device and methods for forming the same

Life of this patent

Semiconductor device and methods for forming the same

Life of this patent

Abstract

Claims20