One-time-programmable memory devices and methods of manufacturing thereof

A memory device, comprising a memory cell that is on a first side of a substrate and comprises an active region and a plurality of metallization layers disposed over the active region, the memory cell configured to randomly present a resolved logic state of a first logic state when a first fuse resistor is blown, or a second logic state when a second fuse resistor is blown, wherein:

• the plurality of metallization layers comprise:
• the first and second fuse resistors;
• a first transistor connected in series with the first fuse resistor;
• and
• a second transistor connected in series with the second fuse resistor;
• and
• the active region comprises:
• a third transistor connected to the first transistor in series;
• and
• a fourth transistor connected to the second transistor in series.

A method for generation of a signature, comprising:

• selecting a first row and a first column of a memory array corresponding to a first memory cell;
• applying a programming voltage to the first memory cell to resolve a first bit of the signature to a first random value according to a condition of a first fuse resistor;
• selecting a second row and a second column of the memory array corresponding to a second memory cell;
• applying the programming voltage to the second memory cell to resolve a second bit of the signature to a second random value according to a condition of a second fuse resistor;
• and
• activating a first transistor of the first memory cell and a second transistor of the second memory cell to determine a logic state of the first bit and the second bit of the signature,
• wherein the first transistor, the second transistor, the first fuse resistor, and the second fuse resistor are disposed in in a plurality of metallization layers on a same side of a substrate.