Filling cracks on a substrate via
AssigneeMicron Technology, Inc.
InventorsQuang Nguyen, Christopher Glancey, Koustav Sinha
Life of this patent
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Abstract
A semiconductor device assembly is provided. The assembly includes a substrate having a first layer with a first contact and a second layer with a second contact. A via that includes a first conductive material electrically couples the first contact and the second contact. A second conductive material having a lower melting point than the first conductive material is disposed at least partially between the via and the second contact. When a crack occurs between the via and the second contact, the second conductive material may be heated to fill the crack. Thus, the techniques, apparatuses, and systems disclosed herein may provide a repairable substrate.
Claims20
A substrate, comprising:
- a first layer including a first contact;
- a second layer including a second contact;
- a via extending between the first layer and the second layer and electrically coupling the first contact and the second contact, the via including a first conductive material having a first melting point;
- and
- a second conductive material disposed at least partially between the via and the second contact, the second conductive material having a second melting point less than the first melting point of the first conductive material.
A substrate, comprising:
- a first layer including a first contact;
- a second layer including a second contact;
- a via extending between the first layer and the second layer and electrically coupling the first contact and the second contact, the via including a first conductive material having a first melting point;
- and
- a second conductive material disposed at least partially between the via and the second contact, the second conductive material having a second melting point less than the first melting point of the first conductive material,
- wherein an upper portion of the via extends over an upper surface of the first contact.
A method of forming a via in a substrate, comprising:
- providing the substrate including a first layer having a first contact and a second layer having a second contact, the first layer and the second layer being separated by a layer of non-conductive material;
- creating an opening through the layer of non-conductive material that exposes the second contact;
- depositing, based on creating the opening, a second conductive material on the second contact, the second conductive material having a second melting point;
- and
- depositing a first conductive material on the second conductive material, the first conductive material (i) extending between the first layer and the second layer, (ii) electrically coupling the first contact and the second contact, and (iii) having a first melting point, wherein the second conductive material is at least partially disposed between the first conductive material and the second contact, wherein an upper portion of the first conductive material extends over an upper surface of the first contact, and wherein the second conductive material has a second melting point that is less than the first melting point of the first conductive material.
Dependencies are inferred from the claim text.