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US 2026/0196979 A1Published application
Bandpass Filter, Multiplexer and Duplexer
AssigneeSanan Japan Technology Corporation
InventorsHitoshi Tsukidate, Takashi Ano, Shinichi SHIOI
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Abstract
A bandpass filter is disclosed, which includes a piezoelectric substrate and a plurality of resonators formed thereon and arranged to constitute the bandpass filter. Some resonators have a first thickness h1, others have a thinner thickness h2. A resonator whose anti-resonant frequency lies above the passband (outside the passband) and is closest to its high-frequency end has a thinner electrode layer thickness h2, thereby improving temperature characteristics and power durability while suppressing an increase in filter size.
Claims20
A bandpass filter having a passband, comprising:
- a piezoelectric substrate;
- and
- a plurality of resonators formed on the piezoelectric substrate;
- wherein the plurality of resonators include IDT electrodes composed of electrode layers provided on the piezoelectric substrate;
- wherein the plurality of resonators include a first resonator having a first electrode layer thickness h1, and a second resonator having a second electrode layer thickness h2, wherein h2<h1;
- and,
- among the plurality of resonators, the resonator whose anti-resonant frequency lies on the higher-frequency side of the passband and is closest to the high-frequency end of the passband, has the electrode layer thickness h2.
4 more elements
Dependencies are inferred from the claim text.