Method for setting up a cvd reactor

A method for creating a sensitivity matrix, Si,j, with elements that indicate an influence of each change in a treatment parameter on layer property values, λi, (i) of layers or layer sequences deposited on a plurality of substrates (7) arranged at spatially separate storage locations (5′) in a process chamber (2) or (ii) of a local variable influencing a layer growth at the storage location (5′), the method comprising:

• feeding gases into the process chamber (2) with treatment parameters and/or temperatures in the process chamber (2) that are set to influence the values, λi, of the layer property of the deposited layer or the local variable;
• forming in preliminary tests the sensitivity matrix, Si,j, with which individual correction parameters, Δq, individual target parameters,
• q
• i
• Z
• ,
• or individual correction factors, ki, are formed for correcting individual parameters, qi, individually assigned to each of the storage locations (5′) in order to achieve predetermined target values,
• λ
• i
• Z
• ,
• for the values, λi;
• and
• forming the treatment parameters by the individual parameters,
• wherein the individual parameters, qi, each have an identical effect on the layer property or the local variable at the respective storage location (5′) to which the individual parameter, qi, is assigned, and
• wherein a change in one of the individual parameters, qi, at a first one of the storage locations (5′) influences the values, λi, at other ones of the storage locations (5′).