Austenite-based stainless steel pipe and method of manufacturing the same
AssigneeNippon Steel Corporation
InventorsHiro OGAWA, Takahiro OSUKI, Nao OTAKI
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Abstract
An austenite-based stainless steel pipe is provided that has large diameter and large wall thickness and that provides high creep strength, good SCC resistance and good SRC resistance. An austenite-based stainless steel pipe has a chemical composition including, in mass %: up to 0.030% C; 0.10 to 1.00% Si; 0.10 to 2.00% Mn; 15.00 to 25.00% Cr; 6.00 to 15.00% Ni; 0.020 to 0.200% N; up to 0.030% sol. Al; 0.001 to 0.045% P; up to 0.010% S; and 0.20 to 1.00% Nb, the steel pipe having an outer diameter not smaller than 200 mm, a wall thickness not smaller than 15 mm, an austenite crystal grain size of 20 to 300 μm, and a recrystallization ratio X not lower than 0.90.
Claims4
An austenite-based stainless steel pipe having a chemical composition of, in mass %:
- up to 0.030% C;
- 0.10 to 1.00% Si;
- 0.10 to 2.00% Mn;
- 15.00 to 25.00% Cr;
- 6.00 to 15.00% Ni;
- 0.020 to 0.200% N;
- up to 0.030% sol. Al;
- 0.001 to 0.045% P;
- up to 0.010% S;
- 0.20 to 1.00% Nb;
- 0 to 2.00% Mo;
- 0 to 2.50% Cu;
- 0 to 0.0050% B;
- and
- balance Fe and impurities,
- an outer diameter being not smaller than 200 mm,
- a wall thickness being not smaller than 15 mm,
- an austenite crystal grain size being 20 to 300 μm,
- a recrystallization ratio X being not lower than 0.90,
- wherein the recrystallization ratio X is measured by:
- taking a sample from a middle portion, as determined along a wall-thickness direction, of the austenite-based stainless steel pipe;
- conducting an electron backscatter diffraction measurement in a grid with a scan spacing not larger than 2.0 μm, where a region not smaller than 10.0 mm2 of a cut surface perpendicular to a pipe-axis direction is measured;
- and classifying those of crystal grains within the measured region which have a GOS value not less than 1.0° as non-recrystallized grains and those with a GOS value less than 1.0° as recrystallized grains, where the defining angle for a crystal grain boundary is 4.0° and the recrystallization ratio X is defined as the ratio of the area of the recrystallized grains SR to the area of the measured region S, SR/S.
Dependencies are inferred from the claim text.