Composition and process for electively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten

A cleaning composition, comprising at least the following components:

• (A) as solubilizer, one or more compounds of formula I:
• wherein R1 is selected from the group consisting of branched or unbranched alkyl having 1, 2, 3 or 4 carbon atoms;
• (B) one or more corrosion inhibitors, selected from the group consisting of benzotriazoles which are unsubstituted or substituted once or twice independently by branched or unbranched alkyl having 1, 2, 3 or 4 carbon atoms, aminoalkyl wherein the alkyl is branched or unbranched and has 1, 2, 3 or 4 carbon atoms, phenyl, thiophenyl, halogen, hydroxy, nitro and/or thiol, and mixtures thereof;
• (C) one or more polar, non-protogenic organic solvents
• wherein the one, or at least one of the more, or all of the more, polar, non-protogenic organic solvents (C) are selected from the group consisting of
• dimethyl formamide,
• dimethyl sulfoxide,
• dimethyl acetamide,
• N-methylpyrrolidone,
• propylene carbonate,
• tetrahydrofuran,
• 2-imidazolidinone which is substituted once or twice by a branched or unbranched alkyl group having 1 to 4 carbon atoms,
• and
• mixtures thereof;
• (D) water,
• and
• (E) one or more alkyl glycol ethers, in a total amount in the range of from 28 mass-% to 50 mass-%, relative to the total mass of the cleaning composition.