Glass for covering semiconductor element, material for covering semiconductor element, and sintered body for covering semiconductor element
AssigneeNippon Electric Glass Co., Ltd.
InventorMasayuki HIROSE
Life of this patent
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Abstract
A glass for covering a semiconductor element, the glass includes, by mol %, 30% to less than 53% of SiO2, 15% to 30% of ZnO, 2% to 14% of Al2O3, 0 to 10% of B2O3, more than 11% to 30% of MgO+CaO as a glass composition, and includes substantially no lead component.
Claims7
A glass for covering a semiconductor element, the glass comprising, by mol %, 30% to less than 53% of SiO2, 15% to 30% of ZnO, 2% to 14% of Al2O3, 0 to 10% of B2O3, more than 11% to 30% of MgO+CaO as a glass composition, and comprising substantially no lead component.
A sintered body for covering a semiconductor element, wherein Zn2SiO4 is contained as a main crystal, and a volume ratio of Zn2SiO4 is 10% to 40%.
A sintered body for covering a semiconductor element, wherein Zn2SiO4 is contained as a main crystal, and a porosity of the sintered body is 10% or less.
Dependencies are inferred from the claim text.