Method for manufacturing oxidized mxene and chemimemristor device using the same

Abstract

A method for manufacturing oxidized MXene according to a preferred embodiment may remove fluorine groups (F) on a surface of MXene and form OH functional groups through an oxidation process to effectively adsorb CO2 molecules and reversibly change electrical conductance according to gas concentration. In addition, a chemimemristor device based on the oxidized MXene (Mn+1Xn(OH)2) may simultaneously implement memristor and gas sensor functions in a single device, and maintain multiple levels of conductance depending on the concentration of adsorbed molecules, and implement, based thereon, reversible changes in conductance according to a concentration of CO2 and multi-level information processing through its characteristics of learning multi-level operations and molecular adsorption history to mimic the human sense of smell and synaptic plasticity of the brain.

Dependencies are inferred from the claim text.