Substrate processing apparatus and substrate processing method

A substrate processing apparatus, comprising:

• a substrate holder configured to hold a substrate from below and provided rotatably about an axis of rotation extending in a vertical direction;
• a spin chuck configured to rotate the substrate holder;
• a processing liquid discharge nozzle configured to process the substrate by supplying a processing liquid to a peripheral edge part of the substrate held by the substrate holder in a processing space at a normal temperature;
• a shielding plate configured to be arranged at a predetermined interval from the upper surface of the substrate held by the substrate holder and heat an upper surface of the substrate while covering and protecting the upper surface of the substrate;
• and
• a CPU configured to control the shielding plate, wherein
• the shielding plate includes a gas supplier configured to discharging a heating gas for heating the peripheral edge part into a space sandwiched between the substrate and the shielding plate by supplying the heating gas to a gas discharge nozzle provided in a central part of the shielding plate to form a flow of the heating gas from a central part toward a radially outer side of the substrate so as to heat an entire surface of the substrate, and
• the CPU controls the shielding plate such that a temperature of the gas discharged from the gas discharge nozzle is in a discharge temperature range of 65° C. to 130° C.