Semiconductor device and method for fabricating the same

A semiconductor device comprising:

• a first passive die and a first core die arranged side-by-side laterally in a first tier, wherein the first passive die comprises a plurality of through-silicon vias (TSVs) and the first core die comprises a first top metallization layer deposited on a top of the first core die and a first bottom metallization layer deposited on a bottom of the first core die;
• a second core die arranged in a second tier vertically on the first tier, wherein the second core die comprises a second top metallization layer deposited on a top of the second core die and a second bottom metallization layer deposited on a first portion of a bottom of the second core die;
• and
• one or more first bumps disposed between a second portion of the bottom of the second core die and a top of the first passive die, the one or more first bumps configured to couple the second core die to one or more TSVs of the plurality of TSVs of the first passive die.