Semiconductor package
AssigneeSamsung Electronics Co., Ltd.
InventorsKyungdon MUN, Donghwa KWAK, Inho ROH
Life of this patent
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Abstract
A semiconductor package includes a package substrate, a first semiconductor chip mounted on the package substrate and that includes a first semiconductor substrate that includes through electrodes, and a second semiconductor chip disposed on the first semiconductor chip and that includes a second semiconductor substrate that includes an active surface and an inactive surface. The second semiconductor chip further includes a plurality of isolated heat dissipation fins that extend in a vertical direction from the inactive surface.
Claims10
A semiconductor package, comprising:
- a package substrate;
- a semiconductor chip stack mounted on the package substrate and that includes a plurality of semiconductor chips;
- and
- a molding member that surrounds the semiconductor chip stack, wherein an uppermost semiconductor chip of the semiconductor chip stack comprises a plurality of heat dissipation fins that have different lengths in a vertical direction, and
- wherein, remaining semiconductor chips in the semiconductor chip stack, excluding the uppermost semiconductor chip, comprise through electrodes, respectively.
A semiconductor package, comprising:
- a package substrate;
- a first semiconductor chip mounted on the package substrate and that includes a first semiconductor substrate that includes a fin-shaped active area and a gate line that extends in a direction that intersects the fin-shaped active area;
- a second semiconductor chip disposed on the first semiconductor chip and that includes a second semiconductor substrate that includes a fin-shaped active area and a plurality of semiconductor patterns that are spaced apart from a top surface of the fin-shaped active area and that include a channel area;
- and
- a molding member that surrounds the first semiconductor chip and the second semiconductor chip on the package substrate, wherein the first semiconductor chip comprises through electrodes that penetrate through the first semiconductor substrate, and
- wherein the second semiconductor substrate comprises a plurality of isolated heat dissipation fins that extend in a vertical direction from the inactive surface of the second semiconductor substrate.
Dependencies are inferred from the claim text.