Contact structure manufacturing method

A semiconductor device comprising:

• a first fin structure;
• a second fin structure separated from the first fin structure in a first direction;
• a first gate structure overlapping the first fin structure and the second fin structure;
• a second gate structure overlapping the first fin structure and the second fin structure, wherein the second gate structure is separated from the first fin structure in a second direction perpendicular to the first direction;
• an isolation layer over the second fin structure, wherein the isolation layer is between the first gate structure and the second gate structure;
• and
• a first contact overlapping the first fin structure and the second fin structure, wherein the isolation layer is between the first contact and the second fin structure.

A semiconductor device comprising:

• a plurality of fin structures over a substrate, wherein each of the plurality of fin structures extends in a first direction;
• a plurality of gate structures extending in a second direction perpendicular to the first direction, wherein each of the plurality of gate structure overlaps multiple fin structures of the plurality of fin structures;
• an isolation layer between a first gate structure of the plurality of gate structures and a second gate structure of the plurality of gate structures;
• and
• a first contact structure between the first gate structure and the second gate structure, wherein the first contact structure has a variable thickness in a third direction perpendicular to the first direction and the second direction, and the isolation layer is between the first contact structure and at least one fin structure of the plurality of fin structures.