Semiconductor package and method of manufacturing the same

A method for manufacturing a semiconductor package comprising:

• forming a semiconductor wafer including first pads;
• attaching a semiconductor chip to the semiconductor wafer, wherein the semiconductor chip includes second pads in contact with the first pads, and a preliminary through-electrode;
• forming a protruding portion of the preliminary through-electrode;
• forming a first preliminary dielectric layer surrounding a side surface of the protruding portion of the preliminary through-electrode;
• forming a second preliminary dielectric layer on the first preliminary dielectric layer;
• and
• forming a first dielectric layer, a second dielectric layer, and a through-electrode by polishing the first preliminary dielectric layer, the second preliminary dielectric layer, and the preliminary through-electrode,
• wherein the first dielectric layer includes a first portion surrounding a side surface of the protruding portion of the through-electrode and a second portion extending from one end of the first portion along the semiconductor chip, and
• wherein the second dielectric layer covers the first portion and the second portion of the first dielectric layer.

A method for manufacturing a semiconductor package comprising:

• forming a semiconductor wafer;
• attaching a semiconductor chip to the semiconductor wafer, wherein the semiconductor chip includes a preliminary substrate having a front surface facing the semiconductor wafer and a rear surface opposite the front surface, and through-electrodes in the preliminary substrate;
• forming protruding portions of the through-electrodes, wherein the protruding portions protrude from a substrate formed by etching the preliminary substrate;
• forming a first preliminary dielectric layer extending along the rear surface of the substrate and side surfaces of the protruding portions of the through-electrodes;
• forming a second preliminary dielectric layer covering the first preliminary dielectric layer;
• and
• forming a first dielectric layer, and a second dielectric layer by polishing at least the first preliminary dielectric layer and the second preliminary dielectric layer.