Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYan-Yu CHEN, Wei Tse HSU
Life of this patent
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Abstract
A semiconductor device includes a device; a bonding oxide; and a carrier wafer bonded to the device through the bonding oxide. The carrier wafer includes a device area overlapped by the device in a plan view. The carrier wafer further includes an edge area adjacent to an outermost periphery of the carrier wafer, wherein the edge area has a first thickness. The carrier wafer further includes a non-bonding area between the device area and the edge area, wherein the non-bonding area has a second thickness greater than the first thickness, a first width of the non-bonding area is greater than a second width of the edge area, and the non-bonding area is free of an overhang structure.
Claims20
A semiconductor device comprising:
- a device;
- a bonding oxide;
- and
- a carrier wafer bonded to the device through the bonding oxide, wherein the carrier wafer comprises:
- a device area overlapped by the device in a plan view;
- an edge area adjacent to an outermost periphery of the carrier wafer, wherein the edge area has a first thickness;
- and
- a non-bonding area between the device area and the edge area, wherein the non-bonding area has a second thickness greater than the first thickness, a first width of the non-bonding area is greater than a second width of the edge area, and the non-bonding area is free of an overhang structure.
A semiconductor device comprising:
- a device;
- and
- a carrier wafer bonded to the device, wherein the carrier wafer comprises:
- a device area overlapped by the device in a plan view;
- an edge area adjacent to an outermost periphery of the carrier wafer, wherein the edge area has a first thickness;
- and
- a non-bonding area between the device area and the edge area, wherein the non-bonding area has a second thickness greater than the first thickness, the non-bonding area is free of an overhang structure, and a region between the edge area and the non-bonding area has a variable thickness.
A semiconductor device comprising:
- a device;
- and
- a carrier wafer bonded to the device, wherein the carrier wafer comprises:
- a device area overlapped by the device in a plan view, wherein the device area has a first thickness;
- an edge area adjacent to an outermost periphery of the carrier wafer, wherein the edge area has a second thickness;
- and
- a non-bonding area between the device area and the edge area, wherein the non-bonding area has a third thickness greater than the second thickness, the third thickness is different from the first thickness, and the non-bonding area is free of an overhang structure.
The semiconductor device 15, further comprising a bonding oxide between the device and the carrier wafer.
Dependencies are inferred from the claim text.