Semiconductor device with two-dimensional materials and forming method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Yang Ming Chiao Tung University
InventorsShu-Jui CHANG, Shin-Yuan WANG, Yu-Che HUANG, Chao-Hsin CHIEN, Chenming HU
Life of this patent
Estimating the term…
Abstract
A device includes a first 2D semiconductor layer over a substrate, a first 2D dielectric layer, a metal gate, and first source/drain regions. The first 2D dielectric layer is lattice-matched with the first 2D semiconductor layer. The metal gate is spaced apart from the first 2D semiconductor layer at least in part by the first 2D dielectric layer. The first source/drain regions interface the first 2D semiconductor layer. The metal gate is laterally between the first source/drain regions.
Claims20
A device comprising:
- a first 2D semiconductor layer over a substrate;
- a first 2D dielectric layer lattice-matched with the first 2D semiconductor layer;
- a metal gate spaced apart from the first 2D semiconductor layer at least in part by the first 2D dielectric layer;
- and
- first source/drain regions interfacing the first 2D semiconductor layer, wherein the metal gate is laterally between the first source/drain regions.
A device comprising:
- a first 2D semiconductor layer;
- a first 2D dielectric layer interfacing a bottom surface of the first 2D semiconductor layer;
- a second 2D dielectric layer interfacing a top surface of the first 2D semiconductor layer;
- a first high-k gate dielectric layer enclosing the first 2D semiconductor layer, the first 2D dielectric layer, and the second 2D dielectric layer in a first cross-sectional view;
- and
- a metal gate enclosing the first high-k gate dielectric layer in the first cross-sectional view.
A device comprising:
- a first 2D material multilayer disposed over a substrate, the first 2D material multilayer comprising a first 2D dielectric layer, a first 2D semiconductor layer over the first 2D dielectric layer, and a second 2D dielectric layer over the first 2D semiconductor layer;
- a second 2D material multilayer above the first 2D material multilayer, the second 2D material multilayer comprising a third 2D dielectric layer, a second 2D semiconductor layer over the third 2D dielectric layer, and a fourth 2D dielectric layer over the second 2D semiconductor layer;
- and
- a gate structure surrounding the first 2D material multilayer and the second 2D material multilayer in a first cross-sectional view, wherein the first 2D material multilayer is separated from the second 2D material multilayer by the gate structure.
Dependencies are inferred from the claim text.