# US 2026/0190846 A1 · Method for forming thin film of perovskite compound and method for manufacturing solar cell using same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0190846 A1 - Document ID: US20260190846A1 - Status: Published application - Kind: A1 - Application number: 18/868,514 - Filed: 2023-06-01 - Published: 2026-07-02 - Earliest claimed: 2022-06-07 - Assignees: Jusung Engineering Co., Ltd. - Applicants: Jusung Engineering Co., Ltd. - Inventors: Jae Ho KIM; Chul Joo HWANG - Web page: https://patentgrep.com/patent/US20260190846A1 ## CPC - H10K 71/311: {Purifying organic semiconductor materials} - C23C 16/30: Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides - C23C 16/45553: {characterized by the use of precursors specially adapted for ALD} - H10K 30/00: Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation (integrated devices or assemblies of multiple devices H10K39/00, H10K65/00; electrolytic light-sensitive devices H01G9/20) - H10K 30/10: comprising heterojunctions between organic semiconductors and inorganic semiconductors - H10K 30/151: {the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2} - H10K 30/20: comprising organic-organic junctions, e.g. donor-acceptor junctions - H10K 30/40: comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers - H10K 30/50: Photovoltaic [PV] devices - H10K 30/57: comprising multiple junctions, e.g. tandem PV cells - H10K 30/80: Constructional details - H10K 71/10: Deposition of organic active material - H10K 71/12: using liquid deposition, e.g. spin coating - H10K 85/60: Organic compounds having low molecular weight (H10K85/10 - H10K85/50 take precedence) - H10K 99/00: Subject matter not provided for in other groups of this subclass - Y02E 10/549: Organic PV cells - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract The present inventive concept provides a method for forming a thin film of a perovskite compound, the method comprising: a step for depositing a perovskite compound by reacting at least one compound selected from amine-based compounds and amidine-based compounds, an organometallic compound including a divalent cation, and at least one halogenated hydrogen; and a step for removing impurities present in the perovskite compound. ## Claims ### Claim 1 A method of forming a thin film of a perovskite compound comprising: a process of depositing a perovskite compound by reacting at least one compound selected from amine-based compounds and amidine-based compounds, organic metal compounds containing a divalent positive ion, and at least one hydrogen halide; and a process of removing impurities in the deposited perovskite compound. ### Claim 2 (depends on 1) The method of forming a thin film of a perovskite compound of claim 1, wherein the impurities are contained in a dangling bond state in a crystal structure of the perovskite compound. ### Claim 3 (depends on 2) The method of forming a thin film of a perovskite compound of claim 2, wherein the impurities include the at least one compound selected from the amine-based compounds and the amidine-based compounds that do not react with the organic metal compounds containing a divalent positive ion and the at least one hydrogen halide, and exist in the dangling bond state. ### Claim 4 (depends on 2) The method of forming a thin film of a perovskite compound of claim 2, wherein the impurities include the at least one hydrogen halide that does not react with the at least one compound selected from the amine-based compounds and the amidine-based compounds and the organic metal compounds containing a divalent positive ion, and exist in the dangling bond state. ### Claim 5 (depends on 1) The method of forming a thin film of a perovskite compound of claim 1, wherein the process of removing the impurities includes a process of reacting the impurities with an organic material by supplying the organic material to the perovskite compound. ### Claim 6 (depends on 5) The method of forming a thin film of a perovskite compound of claim 5, wherein the organic material is formed of a material capable of reacting with at least one of an amine-based compound, an amidine-based compound and hydrogen halide. ### Claim 7 (depends on 6) The method of forming a thin film of a perovskite compound of claim 6, wherein the organic material comprises carbon (C), hydrogen (H), and oxygen (O). ### Claim 8 (depends on 7) The method of forming a thin film of a perovskite compound of claim 7, wherein the organic material comprises C3H8O. ### Claim 9 (depends on 1) The method of forming a thin film of a perovskite compound of claim 1, wherein the impurities include a methyl amine in a dangling bond state, and the process of removing the impurities includes adding C3H8O to the perovskite compound to react the methyl amine in the dangling bond state with the C3H8O for producing CH3NHOH and C3H8. ### Claim 10 (depends on 1) The method of forming a thin film of a perovskite compound of claim 1, wherein the impurities include a hydrogen iodide in a dangling bond state, and the process of removing the impurities includes adding C3H8O to the perovskite compound to react the hydrogen iodide in the dangling bond state with the C3H8O for producing C2H5I and CH3OH. ### Claim 11 (depends on 1) The method of forming a thin film of a perovskite compound of claim 1, wherein the process of removing the impurities includes a process of reacting an organic material with the impurities after the process of depositing the perovskite compound, and wherein the process of reacting the organic material with the impurities includes adding the organic material to the perovskite compound in a solution state. ### Claim 12 (depends on 1) The method of forming a thin film of a perovskite compound of claim 1, wherein the process of removing the impurities includes a process of reacting an organic material with the impurities after the process of depositing the perovskite compound, and wherein the process of reacting the organic material with the impurities includes supplying the organic material into a chamber through a vaporizer or a bubbler. ### Claim 13 (depends on 1) The method of forming a thin film of a perovskite compound of claim 1, wherein the process of depositing the perovskite compound and the process of removing the impurities are simultaneously performed in a chamber. ### Claim 14 (depends on 13) The method of forming a thin film of a perovskite compound of claim 13, wherein the process of depositing the perovskite compound and the process of removing the impurities comprise: a process of supplying a first source material including the at least one compound selected from the amine-based compound and the amidine-based compound; a process of supplying a second source material including the organic metal compounds containing a divalent positive ion; a process of supplying a first reaction material including the at least one hydrogen halide; and a process of supplying a second reaction material including the organic material reacting with the impurities. ### Claim 15 (depends on 14) The method of forming a thin film of a perovskite compound of claim 14, wherein the process of supplying the second reaction material is performed after the process of supplying the first source material, the process of supplying the second source material, and the process of supplying the first reaction material. ### Claim 16 (depends on 14) The method of forming a thin film of a perovskite compound of claim 14, wherein the process of supplying the second reaction material is performed before at least one process among the process of supplying the first source material, the process of supplying the second source material, and the process of supplying the first reaction material. ### Claim 17 (depends on 14) The method of forming a thin film of a perovskite compound of claim 14, wherein the process of supplying the second reaction material is simultaneously performed with at least one process among the process of supplying the first source material, the process of supplying the second source material, and the process of supplying the first reaction material. ### Claim 18 A method of manufacturing a solar cell comprising: a process of forming a crystalline solar cell; a process of forming a buffer layer on the crystalline solar cell; a process of forming a perovskite solar cell on the buffer layer; and a process of forming a first electrode on the perovskite solar cell and a second electrode on the crystalline solar cell, wherein the process of forming the perovskite solar cell comprises a process of forming a thin film of a perovskite compound, and wherein the process of forming the thin film of the perovskite compound comprises: a process of depositing a perovskite compound by reacting at least one compound selected from amine-based compounds and amidine-based compounds, organic metal compounds containing a divalent positive ion, and at least one hydrogen halide; and a process of removing impurities in the deposited perovskite compound.