Display device, electronic device including the same, and method for fabricating the same

A display device comprising:

• a light-emitting element and a thin-film transistor,
• wherein the thin-film transistor comprises:
• a substrate;
• a semiconductor layer on the substrate;
• a gate electrode that overlaps with a channel region of the semiconductor layer in a thickness direction of the substrate;
• a gate insulator between the semiconductor layer and the gate electrode to insulate the semiconductor layer from the gate electrode;
• and
• a source electrode and a drain electrode on a surface of the semiconductor layer,
• wherein the semiconductor layer comprises a perovskite compound represented by the following chemical formula:
• wherein A is R1(NH3+)2 or
• R1 comprises at least one of:
• a substituted or unsubstituted C1-20 linear or branched alkyl group;
• a substituted or unsubstituted 5-membered unsaturated or aromatic ring;
• a substituted or unsubstituted 6-membered unsaturated or aromatic ring;
• a substituted or unsubstituted 5-membered unsaturated or aromatic heterocyclic group;
• and a substituted or unsubstituted 6-membered unsaturated or aromatic heterocyclic group,
• R2 is a substituted or unsubstituted C1-10 alkyl group,
• A1 comprises at least one of:
• a substituted or unsubstituted 5-membered unsaturated or aromatic heterocyclic group;
• and a substituted or unsubstituted 6-membered unsaturated or aromatic heterocyclic group,
• the heterocyclic group comprises at least one selected from the group consisting of N, O and S, A′ comprises at least one of Rb, Cs, K, Na, Mg, Ca, Sr, Ba and an organic cation, and
• X comprises halogen, wherein n denotes an integer equal to or greater than one, and
• wherein one selected from the source electrode and the drain electrode is electrically connected to the light-emitting element.

A method for fabricating a thin-film transistor, the method comprising:

• preparing a perovskite precursor by mixing AX2, SnX2 and a solvent;
• and
• coating and heat-treating the perovskite precursor on a substrate to form a semiconductor layer,
• wherein the semiconductor layer comprises a perovskite compound represented by the following chemical formula:
• wherein A is R1(NH3+)2 or
• R1 comprises at least one of:
• a substituted or unsubstituted C1-20 linear or branched alkyl group;
• a substituted or unsubstituted 5-membered unsaturated or aromatic ring;
• a substituted or unsubstituted 6-membered unsaturated or aromatic ring;
• a substituted or unsubstituted 5-membered unsaturated or aromatic heterocyclic group;
• and a substituted or unsubstituted 6-membered unsaturated or aromatic heterocyclic group,
• R2 is a substituted or unsubstituted C1-10 alkyl group,
• A1 comprises at least one selected from the group consisting of:
• a substituted or unsubstituted 5-membered unsaturated or aromatic heterocyclic group;
• and a substituted or unsubstituted 6-membered unsaturated or aromatic heterocyclic group,
• the heterocyclic group comprises at least one selected from the group consisting of N, O and S, and X comprises halogen.

An electronic device comprising:

• a display device to provide images;
• and
• a processor to transmit an image data signal to the display device,
• wherein the display device comprises:
• a light-emitting element and a thin-film transistor,
• wherein the thin-film transistor comprises:
• a substrate;
• a semiconductor layer on the substrate;
• a gate electrode that overlaps with a channel region of the semiconductor layer in a thickness direction of the substrate;
• a gate insulator between the semiconductor layer and the gate electrode to insulate the semiconductor layer from the gate electrode;
• and
• a source electrode and a drain electrode on a surface of the semiconductor layer,
• wherein the semiconductor layer comprises a perovskite compound represented by the following formula:
• wherein A is R1(NH3+)2 or
• R1 comprises at least one selected from the group consisting of:
• a substituted or unsubstituted C1-20 linear or branched alkyl group;
• a substituted or unsubstituted 5-membered unsaturated or aromatic ring;
• a substituted or unsubstituted 6-membered unsaturated or aromatic ring;
• a substituted or unsubstituted 5-membered unsaturated or aromatic heterocyclic group;
• and a substituted or unsubstituted 6-membered unsaturated or aromatic heterocyclic group,
• R2 is a substituted or unsubstituted C1-10 alkyl group,
• A1 comprises at least one selected from the group consisting of:
• a substituted or unsubstituted 5-membered unsaturated or aromatic heterocyclic group;
• and a substituted or unsubstituted 6-membered unsaturated or aromatic heterocyclic group,
• the heterocyclic group comprises at least one selected from the group consisting of N, O and S,
• A′ comprises at least one selected from the group consisting of Rb, Cs, K, Na, Mg, Ca, Sr, Ba and an organic cation, and X comprises halogen, wherein n denotes an integer equal to or greater than one, and
• wherein one selected from the source electrode and the drain electrode is electrically connected to the light-emitting element.