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US 2026/0190512 A1Published application
Multi-Bandgap Charge-Coupled Device (CCD)
AssigneeThe Board of Regents of the University of Oklahoma
InventorsIan Sellers, Xinyu Dai, Vincent R. Whiteside, Nathaniel Edison Lydick, Brett Bonine
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Abstract
A CCD comprises: a primary device configured to capture visible light and comprising: a first layer comprising a first semiconductor material; and a second layer comprising a second semiconductor material; and a secondary device configured to capture near-IR light and comprising: a third layer comprising a third semiconductor material and positioned such that the second layer is between the first layer and the third layer; and a fourth layer comprising a fourth semiconductor material and positioned such that the third layer is between the second layer and the fourth layer.
Claims14
A charge-coupled device (CCD) comprising:
- a primary device comprising:
- a first layer, consisting of gallium phosphide (GaP) and having a light selectivity of at least 95% in a range of wavelengths between 300 nanometers (nm) and 465 nm;
- a second layer, consisting of indium gallium phosphide (InGaP), the second layer positioned below the first layer and directly connected thereto, and the second layer having a light selectivity of at least 95% in a range of wavelengths between 465 nm and 670 nm;
- a third layer, consisting of gallium arsenide (GaAs), the third layer positioned below the second layer and directly connected and lattice-matched thereto, and the third layer having a light selectivity of at least 89% in a range of wavelengths between 670 nm and 875 nm;
- a fourth layer, consisting of indium phosphide (InP), the fourth layer positioned below the third layer and directly connected thereto, and the fourth layer having a light selectivity of at least 86% in a range of wavelengths between 875 nm and 945 nm;
- a fifth layer, consisting of indium gallium arsenide phosphide (InGaAsP), the fifth layer positioned below the fourth layer and directly connected and lattice matched thereto, and the fifth layer having a light selectivity of at least 89% in a range of wavelengths between 945 nm and 1070 nm;
- and
- a secondary device comprising:
- a sixth layer, consisting of gallium antimonide (GaSb), the sixth layer positioned below the fifth layer and directly connected thereto, and the sixth layer having a light selectivity of at least 95% in a range of wavelengths between 1070 nm and 1740 nm;
- and
- a seventh layer, consisting of indium arsenide (InAs), the seventh layer positioned below the sixth layer and directly connected thereto, and the seventh layer having a light selectivity of at least 92% in a range of wavelengths between 1740 nm and 1900 nm.
8 more elements
An imaging method, comprising:
- providing a charge-coupled device (CCD) comprising:
- a primary device comprising:
- a first layer, consisting of gallium phosphide (GaP) and having a light selectivity of at least 95% in a range of wavelengths between 300 nanometers (nm) and 465 nm,
- a second layer, consisting of indium gallium phosphide (InGaP), the second layer positioned below the first layer and directly connected thereto, and the second layer having a light selectivity of at least 95% in a range of wavelengths between 465 nm and 670 nm,
- a third layer, consisting of gallium arsenide (GaAs), the third layer positioned below the second layer and directly connected and lattice-matched thereto, and the third layer having a light selectivity of at least 89% in a range of wavelengths between 670 nm and 875 nm,
- a fourth layer, consisting of indium phosphide (InP), the fourth layer positioned below the third layer and directly connected thereto, and the fourth layer having a light selectivity of at least 86% in a range of wavelengths between 875 nm and 945 nm,
- a fifth layer, consisting of indium gallium arsenide phosphide (InGaAsP), the fifth layer positioned below the fourth layer and directly connected and lattice matched thereto, and the fifth layer having a light selectivity of at least 89% in a range of wavelengths between 945 nm and 1070 nm;
- and
- a secondary device comprising:
- a sixth layer, consisting of gallium antimonide (GaSb), the sixth layer positioned below the fifth layer and directly connected thereto, and the sixth layer having a light selectivity of at least 95% in a range of wavelengths between 1070 nm and 1740 nm, and
- a seventh layer, consisting of indium arsenide (InAs), the seventh layer positioned below the sixth layer and directly connected thereto, and the seventh layer having a light selectivity of at least 92% in a range of wavelengths between 1740 nm and 1900 nm;
- directing light into the CCD;
- recording electrical signals generated from the primary device and the secondary device based on the light;
- generating pixels based on the electrical signals;
- and
- displaying the pixels as displayed pixels.
13 more elements
Dependencies are inferred from the claim text.