Semiconductor device

A semiconductor device comprising:

• a gate structure on an upper surface of a semiconductor substrate, the gate structure extending in a first direction perpendicular to the upper surface;
• a plurality of active regions on both sides of the gate structure in a second direction parallel to the upper surface;
• an upper gate contact on the gate structure in the first direction and being in contact with the gate structure;
• a lower gate contact in the semiconductor substrate and in contact with the gate structure;
• an upper gate interconnection line electrically connected to the upper gate contact and extended in a third direction intersecting the second direction and parallel to the upper surface;
• and
• a lower gate interconnection line electrically connected to the lower gate contact and extended in the third direction.

A semiconductor device comprising:

• a gate structure extended in a first direction perpendicular to an upper surface of a semiconductor substrate, the gate structure being arranged in a second direction parallel to the upper surface, the gate structure extended in a third direction parallel to the upper surface and perpendicular to the second direction;
• active regions disposed on both sides of the gate structure in the second direction;
• and
• a plurality of gate interconnection lines electrically connected to the gate structure,
• wherein the plurality of gate interconnection lines includes an upper gate interconnection line and a lower gate interconnection line disposed at different heights in the first direction, and
• wherein the semiconductor substrate is between the upper gate interconnection line and the lower gate interconnection line in the first direction.