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US 2026/0190436 A1Published application
Semiconductor device and method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorWon Tae KOO
Life of this patent
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Abstract
A semiconductor device includes a substrate including a source area and a drain area, a first dielectric layer disposed on the substrate, a second dielectric layer disposed on the first dielectric layer and including a porous material, a ferroelectric layer disposed on the second dielectric layer, and an electrode layer disposed on the ferroelectric layer.
Claims30
A semiconductor device comprising:
- a substrate including a source area and a drain area;
- a first dielectric layer disposed on the substrate;
- a second dielectric layer disposed on the first dielectric layer and including a porous material;
- a ferroelectric layer disposed on the second dielectric layer;
- and
- an electrode layer disposed on the ferroelectric layer.
3 more elements
A semiconductor device comprising:
- a gate structure including insulating layers and conductive layers alternately stacked;
- a channel layer extending through the gate structure;
- a first dielectric layer surrounding the channel layer;
- a second dielectric layer surrounding the first dielectric layer and including a porous material;
- and
- a ferroelectric layer surrounding the second dielectric layer.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a first dielectric layer on a substrate including a source area and a drain area;
- forming a second dielectric layer including a porous material on the first dielectric layer;
- forming a ferroelectric layer on the second dielectric layer;
- and
- forming an electrode layer on the ferroelectric layer.
2 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a stack by alternately stacking first material layers and second material layers;
- forming a channel hole extending through the stack;
- forming a ferroelectric layer in the channel hole;
- forming a second dielectric layer including a porous material on the ferroelectric layer;
- forming a first dielectric layer on the second dielectric layer;
- and
- forming a channel layer on the first dielectric layer.
4 more elements
Dependencies are inferred from the claim text.