Integrated circuit structures having uniform grid metal gate and trench contact placeholder cut with direct patterned trench contact and non-selective fin trim isolation

An integrated circuit structure, comprising:

• a fin;
• a gate structure over the fin;
• a dielectric structure laterally spaced apart from the gate structure, wherein the dielectric structure is not over a channel structure;
• and
• a dielectric gate cut plug laterally between and in contact with the gate structure and the dielectric structure, wherein the dielectric structure has an uppermost surface above an uppermost surface of the dielectric gate cut plug.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a vertical stack of horizontal nanowires or a fin;
• a gate structure over the vertical stack of horizontal nanowires or the fin;
• a dielectric structure laterally spaced apart from the gate structure, wherein the dielectric structure is not over a channel structure;
• and
• a dielectric gate cut plug laterally between and in contact with the gate structure and the dielectric structure, wherein the dielectric structure has an uppermost surface above an uppermost surface of the dielectric gate cut plug.