Methods for forming seed layer and plasma etching process
AssigneeAbsolics Inc.
InventorsSeHan YUN, Chun Jae LEE, DAE HWAN KIM
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Abstract
According to embodiments, a method for forming a seed layer comprises: an operation of forming an ion-passage hole by removing a portion of an insulating layer in a workpiece arranged such that a metal-pattern layer is disposed below and the insulating layer is disposed over it; a masking operation of forming a metal mask layer on the insulating layer; and a sputtering operation of forming a seed layer on the insulating layer by plasma sputtering; wherein the metal mask layer is connected to the metal-pattern layer through a sidewall surface of the ion-passage hole.
Claims10
A method for forming a seed layer, comprising:
- an operation of forming an ion-passage hole by removing a portion of an insulating layer in a workpiece arranged such that a metal-pattern layer is disposed below and the insulating layer is disposed over it;
- a masking operation of forming a metal mask layer on the insulating layer;
- and
- a sputtering operation of forming a seed layer on the insulating layer by plasma sputtering;
- wherein the metal mask layer is connected to the metal-pattern layer through a sidewall surface of the ion-passage hole.
A plasma etching method, comprising:
- an operation of forming an ion-passage hole by removing a portion of an insulating layer in a workpiece arranged such that a metal-pattern layer is disposed below and the insulating layer is disposed over it;
- a masking operation of disposing a metal mask layer on the insulating layer;
- and
- a via-forming operation of providing a blind via in the insulating layer by plasma etching;
- wherein the metal mask layer is connected to the metal-pattern layer through a sidewall surface of the ion-passage hole.
Dependencies are inferred from the claim text.