Variable-swing nmos-over-nmos driver

An apparatus comprising:

• a driver circuit including:
• a first region including a first semiconductor material of a first conductivity type, a first additional region including a first additional semiconductor material of the first conductivity type, and a region between the first region and the first additional region and including a first semiconductor material of a second conductivity type;
• a second region including a second semiconductor material of the first conductivity type, a second additional region including a second additional semiconductor material of the first conductivity type, and a region between the second region and the second additional region and including a second semiconductor material of the second conductivity type;
• a third region including a third semiconductor material of the second conductivity type, a third additional region including a third additional semiconductor material of the second conductivity type, and a region between the third region and the third additional region and including a third semiconductor material of the first conductivity type;
• a conductive region separated from the region between the third region and the third additional region by a dielectric region;
• a conductive connection coupled to the second additional region and the third region;
• and
• a first supply node coupled to the first region and the conductive region;
• and
• a second supply node coupled to the third additional region.

A process of making a driver of an electronic apparatus, comprising:

• forming a first N-type transistor between a first supply node and an output node of the driver;
• forming a second N-type transistor between a node and the output node of the driver;
• forming a P-type transistor between the node and a second supply node;
• and
• forming a conductive connection between a gate of the P-type transistor and a ground connection.