Semiconductor manufacturing apparatus including reflector
AssigneeSamsung Electronics Co., Ltd.
InventorCHEOL KIM
Life of this patent
Estimating the term…
Abstract
A semiconductor manufacturing apparatus may include: a first chamber including a first internal space; an ion generator configured to generate ions within the first internal space; a second chamber including a second internal space, the second internal space communicatively connected to the first internal space; a beam generator between the first internal space and the second internal space and configured to convert the ions into ion beams; a chuck within the second chamber; and a reflector within the second chamber, the reflector including a reflective surface that is curved, and the reflector configured to reflect the ion beams toward the chuck.
Claims20
A semiconductor manufacturing apparatus comprising:
- a first chamber including a first internal space;
- an ion generator configured to generate ions within the first internal space;
- a second chamber including a second internal space, the second internal space communicatively connected to the first internal space;
- a beam generator between the first internal space and the second internal space and configured to convert the ions into ion beams;
- a chuck within the second chamber;
- and
- a reflector within the second chamber, the reflector comprising a reflective surface that is curved, and the reflector configured to reflect the ion beams toward the chuck.
A semiconductor manufacturing apparatus comprising:
- a first chamber including a first internal space;
- an ion generator configured to generate ions within the first internal space;
- a second chamber including a second internal space, the second internal space communicatively connected to the first internal space;
- a beam generator between the first internal space and the second internal space and configured to convert the ions into ion beams;
- a chuck within the second chamber;
- and
- a reflector within the second chamber, the reflector comprising a reflective surface that is curved, and the reflector configured to reflect the ion beams toward the chuck,
- wherein the reflective surface of the reflector is configured to reflect the ion beams in a first direction at different angles, the different angles being in a cross-sectional view of the semiconductor manufacturing apparatus taken along a plane that is parallel to the first direction and a second direction that crosses the first direction.
A semiconductor manufacturing apparatus comprising:
- a first chamber including a first internal space;
- an ion generator configured to generate ions within the first internal space;
- a second chamber including a second internal space, the second internal space communicatively connected to the first internal space;
- a beam generator between the first internal space and the second internal space and configured to convert the ions into ion beams;
- a chuck within the second chamber and configured to support a substrate;
- and
- a reflector within the second chamber, the reflector comprising a plurality of sub-reflectors that comprise a reflective surface that is curved, and the plurality of sub-reflectors configured to reflect the ion beams toward the chuck.
Dependencies are inferred from the claim text.