Heating chamber and reaction chamber

Abstract

Disclosed are a heating chamber and a reaction chamber. The heating chamber includes a substrate conveyance channel, configured for conveyance of the substrate. The substrate conveyance channel is formed with a substrate placing position where the substrate is picked or placed. A gas transport and growth chamber is arranged in parallel with the substrate conveyance channel, and the gas transport and growth chamber is formed with an epitaxial growth position for the epitaxial growth of the substrate. A transfer port of the substrate conveyance channel and a gas supply port of the gas transport and growth chamber are located on a same side of the heating chamber. As described above, the conveying apparatus no longer passes through a downstream space of the reaction chamber where a dust-like by-product is produced, so that a surface defect of the substrate caused by particles in the downstream space may be greatly reduced.

Dependencies are inferred from the claim text.