Apparatus and method for growing high-quality silicon carbide crystals and silicon carbide crystals

An apparatus for growing high-quality silicon carbide crystals,

• comprising a crucible, wherein a seed crystal for growing silicon carbide crystals is arranged on a top wall of the crucible;
• and
• an annular guide plate, wherein the annular guide plate is arranged in the crucible, a bottom end of the annular guide plate is connected to a side wall of the crucible, a top end of the annular guide plate extends toward the seed crystal, a gap is formed between the top end and an edge of the seed crystal, a first chamber is defined by the annular guide plate, the seed crystal, the side wall of the crucible and a bottom wall of the crucible jointly, a second chamber is defined by the annular guide plate, the seed crystal, the side wall of the crucible and the top wall of the crucible jointly, the first chamber is communicated with the second chamber through the gap, and a pressure equalizing structure for balancing a pressure of the first chamber and a pressure of the second chamber is arranged on the annular guide plate;
• the pressure equalizing structure comprises air holes formed in the annular guide plate, and the air holes are communicated with the first chamber and the second chamber;
• and the annular guide plate comprises a first annular portion and a second annular portion, the first annular portion is connected with the second annular portion at an angle, an end, away from the second annular portion, of the first annular portion is connected with an inner wall of the crucible, an end, away from the first annular portion, of the second annular portion extends toward the seed crystal, and the air holes are formed in the first annular portion.