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US 2026/0185233 A1Published application
Semiconductor heat treatment member
AssigneeCoorstek Gk
InventorMasatoshi INOUE
Life of this patent
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Abstract
A semiconductor heat treatment member includes: a substrate containing carbon or silicon carbide; and a CVD-SiC film with which a surface of the substrate is covered, a surface of the CVD-SiC film is an unprocessed surface, the CVD-SiC film has an average particle diameter of SiC particles of at least 60 μm, and the CVD-SiC film has a surface roughness Sa of at least 3.5 μm, and contains SiC particles having a flat surface of at least 3,600 μm2.
Claims2
A semiconductor heat treatment member comprising:
- a substrate comprising carbon or silicon carbide;
- and
- a CVD-SiC film with which a surface of the substrate is covered, wherein
- a surface of the CVD-SiC film is an unprocessed surface,
- the CVD-SiC film has an average particle diameter of SiC particles of at least 60 μm, and
- the CVD-SiC film has a surface roughness Sa of at least 3.5 μm, and
- contains SiC particles having a flat surface of at least 3,600 μm2.
4 more elements
Dependencies are inferred from the claim text.