Silicon etchant composition and method of forming pattern using the same

Abstract

A silicon etchant composition includes an amine-based compound, a pyrazine compound, an alkaline compound including at least one of an organic hydroxide and an inorganic hydroxide, and a solvent. In a method of forming a pattern, a silicon-containing layer is formed on a substrate. A silicon protective layer is formed on a portion of the silicon-containing layer. The silicon-containing layer includes silicon and germanium. The silicon-containing is etched using the silicon etchant composition.

Dependencies are inferred from the claim text.