Back to results
US 2026/0184576 A1Published application
Methods of etching diamond films
AssigneeApplied Materials, Inc.
InventorsNyi Myat Khine Linn, Chiew Wah Yap, Vicknesh Sahmuganathan, John Sudijono
Life of this patent
Estimating the term…
Abstract
Methods of etching diamond films are described. The methods include exposing a diamond film on a substrate in an etching chamber to a plasma to form a modified diamond film, wherein exposing the diamond film on the substrate to the plasma comprises a first step and a second step performed after the first step, and the modified diamond film has a thickness that is less than a thickness of the diamond film.
Claims20
A processing method comprising:
- exposing a diamond film on a substrate in an etching chamber to a plasma to form a modified diamond film, wherein exposing the diamond film on the substrate to the plasma comprises a first step and a second step performed after the first step, and the modified diamond film has a thickness that is less than a thickness of the diamond film.
A processing method comprising:
- exposing a diamond film on a substrate in an inductively coupled plasma (ICP) chamber to a first plasma exposure to form a modified diamond film, followed by a second plasma exposure,
- wherein the first plasma exposure comprises exposing the diamond film to a plasma of a reactive gas without any bias power for at least 6 seconds, and the second plasma exposure comprises exposing the modified diamond film to a plasma of an inert gas with a bias power in a range of from 10 watts to 75 watts for at least 6 seconds.
Dependencies are inferred from the claim text.