Microelectronic device comprising an unclonable physical function and associated manufacturing method

A microelectronic device comprising a plurality of resistive memory points, a first part of said resistive memory points being resistive memory points configured to provide an unclonable physical function, the resistive memory points of said first part forming a PUF zone of the device, a second part of said resistive memory points being configured to provide a memory function to the microelectronic device, the resistive memory points of the second part forming a memory zone of the device, each resistive memory point comprising a first electrode layer, a second electrode layer, and an active layer of resistive memory comprised between the first and second electrode layers, said microelectronic device being characterised in that each resistive memory point of the first part forming the PUF zone comprises a carbon layer with a thickness greater than or equal to 3 nanometres which extends between the first electrode layer and the active layer.